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| GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) MIE-544A4 Unit: mm(inch) Package Dimensions 5.05 (.199) 5.47 (.215) 5.90 (.230) 1.00 (.039) SEE NOTE 2 FLAT DENOTES CATHODE Features l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( 5mm) package, radiant angle : 40 Peak wavelength P =940 nm Good spectral matching to si-photodetecto 2.54 NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.40 MIN. (.921) l l l l 1.00MIN. (.039) A C Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 1 50 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-544A4 Optical-Electrical Characteristics o @ TA=25 C Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR 21/2 Min. 1.0 Typ . 2.0 1.30 940 50 40 Max. 1.5 100 Unit mW/sr V A nm nm deg . Typical Optical-Electrical Characteristic Curves Relative Radiant Intensity 1 Forward Current I F (mA) 60 50 40 30 20 10 0 -55 -25 0 25 50 75 100 125 0.5 0 840 940 1040 FIG.1 SPECTRAL DISTRIBUTION 100 Output Power To Value I F=20mA Wavelength (nm) Ambient Temperature TA (oC) FIG.2 FORWARD CURRENT VS. AMBIENT TEMPERATURE 3 2.5 2 1.5 1 0.5 0 -40 -20 0 20 40 60 o Forward Current (mA) 80 60 40 20 0 0 1.2 1.6 2.0 2.4 2.8 Forward Voltage (V) FIG.3 FORWARD CURRENT VS. FORWARD VOLTAGE Output Power Relative To Value at I F=20mA 5 4 3 2 1 0 0 20 40 60 80 100 Ambient Temperature TA( C) FIG.4 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 0 10 20 30 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 40 50 60 70 80 90 Forward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT Relative Radiant Intensity FIG.6 RADIATION DIAGRAM Unity Opto Technology Co., Ltd. 11/17/2000 |
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